Lee Woo-Geun | Samsung Electronics Co., Ltd., Yongin, Gyeonggi 446-711, Korea
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概要
Samsung Electronics Co., Ltd., Yongin, Gyeonggi 446-711, Korea | 論文
- Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress
- Effect of Channel Length on the Reliability of Amorphous Indium--Gallium--Zinc Oxide Thin Film Transistors