Nakayama Tatsuo | R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan

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• Nakayama Tatsuoの詳細を見る
• 同名の論文著者
• R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japanの論文著者

R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu 520-0833, Japan | 論文

• C-Band GaN-Based Field-Effect-Transistor Power Amplifiers with 170-W Output Power

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