Li Fushan | Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, People's Republic of China
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- Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, People's Republic of Chinaの論文著者
Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, People's Republic of China | 論文
- Efficient Nonvolatile Rewritable Memories Based on Three-Dimensionally Confined Au Quantum Dots Embedded in Ultrathin Polyimide Layers
- Carrier Transport in Volatile Memory Device with SnO2 Quantum Dots Embedded in a Polyimide Layer
- Flexible White Organic Light-Emitting Diodes Based on Single-Walled Carbon Nanotube:Poly(3,4-ethylenedioxythiophene)/Poly(styrene sulfonate) Transparent Conducting Film