Okudaira Tomonori | Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

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概要

• Okudaira Tomonoriの詳細を見る
• 同名の論文著者
• Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japanの論文著者

関連著者

• Asai Koyu

  Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

• Yamaguchi Tadashi

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Kashihara Keiichiro

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Okudaira Tomonori

  Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

• Kashihara Keiichiro

  Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

• Yamaguchi Tadashi

  Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

• Yoneda Masahiro

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Kudo Shuichi

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Tsutsumi Toshiaki

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Maekawa Kazuyoshi

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Maekawa Kazuyoshi

  Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

• Tsutsumi Toshiaki

  Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

• Yoneda Masahiro

  Renesas Semiconductor Engineering Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Kudo Shuichi

  Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

• Asai Koyu

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Okudaira Tomonori

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Miyatake Hiroshi

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Kojima Masayuki

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Hirose Yukinori

  Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

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著作論文

• Characterizations of NiSi2-Whisker Defects in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with $\langle 110\rangle$ Channel on Si(100)
• Narrow Line Effect of Nickel Silicide on p+ Active Lines and Its Suppression by Fluorine Ion Implantation
• Anomalous Nickel Silicide Encroachment in n-Channel Metal–Oxide–Semiconductor Field-Effect Transitors on Si(110) Substrates and Its Suppression by Si+ Ion-Implantation Technique

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