Hasunuma Ryu | University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, Japan
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- University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, Japanの論文著者
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, Japan | 論文
- Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-$k$/Metal Gate Stack p-Type Metal–Oxide–Silicon Field Effect Transistors
- Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-$k$/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm