Lee Y. | Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electronics Co. Ltd.
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- Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electronics Co. Ltd.の論文著者
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electronics Co. Ltd. | 論文
- Optimization of Ring Type Electrode Process for High Density PRAM
- Endurance Characterization of Ferroelectric Cell in 64Mb FRAM Device By Analyzing the Space Charge Concentration
- Highly Reliable Ring Type Contact Scheme for High Density PRAM
- Robust 2-D Stack Capacitor Technologies for 64Mb 1T1C FRAM
- GST Confined Structure and Integration of 64Mb PRAM