Takahashi Yoshihiro | Department Of Electronics Aichi Institute Of Technology
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概要
Department Of Electronics Aichi Institute Of Technology | 論文
- Current DLTS with a Bipolar Rectangular Weighting Function for MOS Structures
- Current DLTS with a Bipolar Rectangular Weighting Function for a Neutron-Irradiated P-Type Si
- Studies of Neutron-Produced Defects in Silicon by Deep-Level Transient Spectroscopy
- Transient Drain Current Measurements of Neutron-Irradiated Silicon p-Channel Junction Field-Effect Transistors
- Kinetic Treatment of Self-Reversal in Reversed Field Pinch Plasma