Lee Jang-sik | Technology Development Team Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd
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Technology Development Team Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd | 論文
- Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory
- Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-$k$ Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory