Mizoguchi Naoki | Department Of Physics Niigata University
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概要
関連著者
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Mizoguchi Naoki
Department Of Physics Niigata University
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Kobayashi Michisuke
Department Of Physice Nigata University
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MIZOGUCHI Naoki
Department of Physics,Niigata University
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Kobayashi Michisuke
Department of Physics, Faculty of Science, Niigata University
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YOKOTA Isaaki
Department of Physics, Faculty of Science, Niigata University
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Yokota Isaaki
Department Of Physics Faculity Of Science Niigata University
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Tanimoto Kotaro
Department Of Orthodontics And Craniofacial Developmental Biology Hiroshima University Graduate Scho
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HAYASHI Hidemitsu
Institute for Solid State Physics,University of Tokyo
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Hayashi Hidemitsu
Institute For Solid State Physics University Of Tokyo
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Mizoguchi N
Department Of Physics Niigata University
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Mitsuo Hasegawa
Department of Information Science, Faculty of Science, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan
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Tomohisa Mizuno
Department of Information Science, Faculty of Science, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan
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Naoki Mizoguchi
Department of Information Science, Faculty of Science, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan
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Mizuno Tomohisa
Department of Information Science, Faculty of Science, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan
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Tomoaki Yamauchi
Department of Information Science, Faculty of Science, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan
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Toshiyuki Sameshima
Faculty of Engineering, Tokyo University of Agriculture and Technology, 2-24-18 Kakamachi, Koganei, Tokyo 184-8588, Japan
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Tsutomu Tezuka
MIRAI-Toshiba, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Kotaro Tanimoto
Department of Information Science, Faculty of Science, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan
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HAYASHI Hidemitsu
Institute for Molecular Science
著作論文
- Collective Motion in Superionic Conductors : Transverse Conductivity and Polaritons
- Collective Excitations in Intercalated Layered Materials
- New Source Heterojunction Structures with Relaxed/Strained Semiconductors for Quasi-Ballistic Complementary Metal–Oxide–Semiconductor Transistors: Relaxation Technique of Strained Substrates and Design of Sub-10 nm Devices