Dobbs H. | Interdisciplinary Research Centre For Semiconductor Materials The Blackett Laboratory Imperial Colle
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Interdisciplinary Research Centre For Semiconductor Materials The Blackett Laboratory Imperial Colle | 論文
- Surface Hydrogen Effects on Ge Surface Segregation during Silicon Gas Source Molecular Beam Epitaxy
- A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A-Quantum Dots and Two-Dimensional Modes ( Quantum Dot Structures)