Shishiguchi Seiichi | Nec Electronics Corporation Process Technology Division
スポンサーリンク
概要
関連著者
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Mineji Akira
Nec Electronics Corporation Process Technology Division
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Oshida Makiko
Nec Corporation Device Platforms Research Laboratories
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IKARASHI Nobuyuki
NEC Corporation, Device Platforms Research Laboratories
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Shishiguchi Seiichi
Nec Electronics Corporation Process Technology Division
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Saitoh Motofumi
Nec Corporation Device Platforms Research Laboratories
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Miyamura Makoto
Nec Corporation Device Platforms Research Laboratories
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MIYAMURA Makoto
NEC Corporation, Device Platforms Research Laboratories
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SAITOH Motofumi
NEC Corporation, Device Platforms Research Laboratories
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SHISHIGUCHI Seiichi
NEC Electronics Corporation, Process Technology Division
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Ikarashi N
Nec Corporation Device Platforms Research Laboratories
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Ikarashi Nobuyuki
System Devices Research Laboratories Nec Corporation
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Ikarashi Nobuyuki
NEC Corporation, Device Platforms Research Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Miyamura Makoto
NEC Corporation, Device Platforms Research Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Saitoh Motofumi
NEC Corporation, Device Platforms Research Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Oshida Makiko
NEC Corporation, Device Platforms Research Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
著作論文
- Electron Holography Characterization of Ultra-Shallow Junctions in 30-nm Gate-length MOS-FETs
- Electron Holography Characterization of Ultra Shallow Junctions in 30-nm-Gate-Length Metal–Oxide–Semiconductor Field-Effect Transistors