JIMBO M. | Daido Inst. Tech.
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概要
関連著者
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FUJIWARA Y.
Mie Univ.
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JIMBO M.
Daido Inst. Tech.
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Hagler T.
Uni. Regensburg
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BAYREUTHER G.
Uni. Regensburg
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Jimbo M.
Department Of Electronics And Electrical Engineering Daido Institute Of Technology
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NAKANISHI H.
Mie University
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OMAE H.
Mie University
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KOBAYASHI T.
Mie University
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SHIOMI S.
Mie University
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Shiomi S.
Faculty Of Engineering Mie Univ.
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Omae H.
Department Of Physics Engineering Mie University
著作論文
- GMR effect of three terminal devices with NiFe/CU/Co layer
- Preparation of magnetic tunnel transistors with double tunnel junctions