Chen L‐c | Formosa Epitaxy Incorporation
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概要
Formosa Epitaxy Incorporation | 論文
- Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes : Optics and Quantum Electoronics
- Growth and Characterization of High-Quality InAs_Sb_P_ Alloy by Liquid-Phase Epitaxy
- Thermal Properties of InAs_Sb_P_ Homostructure Diodes
- Liquid-Phase Epitaxial Growth of In_Ga_P on GaP Substrates from Sn-Rich Solutions