Gomyo A | Single Quantum Dot Project Erato Japan Science & Technology Corporation (jst) C
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Single Quantum Dot Project Erato Japan Science & Technology Corporation (jst) C | 論文
- Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice Disordering
- Large (6°) Off-Angle Effects on Sublattice Ordering and Band-Gap Energy in Ga_In_P Grown on (001) GaAs Substrates
- Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga_In_P Grown by Metalorganic Vapor Phase Epitaxy
- Nonexistence of Long-Range Order in Ga_In_P Epitaxial Layers Grown on (111)B and (110) GaAs Substrates : Semiconductors and Semiconductor Devices
- Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices