Wu M‐c | Institute Of Electronics Engineering National Tsing Hua University
スポンサーリンク
概要
Institute Of Electronics Engineering National Tsing Hua University | 論文
- Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers
- Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes : Optics and Quantum Electoronics
- Growth and Characterization of High-Quality InAs_Sb_P_ Alloy by Liquid-Phase Epitaxy
- Thermal Properties of InAs_Sb_P_ Homostructure Diodes
- Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes