Uozumi G | Mitsubishi Materials Corporation Central Research Institute
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概要
Mitsubishi Materials Corporation Central Research Institute | 論文
- Phosphorous Doping of Strain-Induced Si_C_y Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
- P-Doping into Strain-Induced Si_C_y Epitaxial Films Grown by Low Temperature Chemical Vapor Deposition
- Epitaxial Growth of Si_C_y Film by Low Temperature Chemical vapor Deposition
- Characterization of Tensile Strained Si_1_yCy Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature
- Growth Mechanism during Silicon Epitaxy by Photochemical Vapor Deposition at Low Temperatures