HUANG B. | Institute of Electronics Engineering, National Yunlin University of Science and Technology

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概要

関連著者

WANG S.
Institute of Electro-Optical Engineering, National Chiao Tung University
CHANG S.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
SU Y.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
CHEN C.
Department of Physics, Faculty of Science, Tokai University
Wang S.
Institute Of Electro-optical Engineering National Chiao Tung University
Chen C.
Department Of Electronic Engineering Cheng Shiu University
HUANG B.
Institute of Electronics Engineering, National Yunlin University of Science and Technology
HUNG H.
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung Universi
CHOU Y.
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung Universi
Wang S.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
Chen C.
Department Of Electrical Engineering National Central University
Chen C.
Department Of Aeronautics And Astronautics National Cheng-kung University
Su Y.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
Chang S.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
Hung H.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
Chang S.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
Chou Y.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
Su Y.
Institute Of Electrical And Computer Engineering National Cheng Kung University
Chang S.
Institute Of Electro-optical Science And Engineering National Cheng Kung University

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著作論文

The novel method to improve electrical characteristics of p-type GaN by using Ni catalysis

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