Ishibashi A | Sony Corp. Res. Center Yokohama Jpn
スポンサーリンク
概要
Sony Corp. Res. Center Yokohama Jpn | 論文
- 0.13μm Metal-Oxide-Nitride-Oxide-Semiconductor Single Transistor Memory Cell with Separated Source Line
- Analysis of Carrier Traps in Si_3N_4N_4 in Oxide/Nitride/Oxide for Metal/Oxide/Nitride/Oxide/Silicon Nonvolatile Memory
- Friction Force Microscopy Study of the Langmuir-Blodgett Films with Different Molecular Structures
- Control of Reaction Mechanism of Photochemical Vapor Deposition of Aluminum Film by Timing of Source Introduction
- Multiple Photochemical Hole Burning in Tetraphenylporphine Derivatives Using a Focused Laser Beam : Future Technology