Hoshino K | Research Laboratory Denso Corporation
スポンサーリンク
概要
Research Laboratory Denso Corporation | 論文
- Effect of Hydrogenation on the Dangling-Bond Free 4H-SiC(1120)/SiO_2 Interface Studied by Ab Initio Calculations
- First Principles Theoretical Study of 4H-SiC/SiO_2 Interfacial Electronic States on (0001), (0001), and (1120)
- A Light-Controlled Oscillator Using InAlAs/InGaAs High Electron Mobility Transistor (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)