Higurashi H | Ulsi Research Laboratories Research And Development Center Toshiba Corporation
スポンサーリンク
概要
関連著者
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Higurashi H
Ulsi Research Laboratories Research And Development Center Toshiba Corporation
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HIGURASHI Hitoshi
Department of Physics, Faculty of Science and Technology Keio University
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若家 冨士男
Osaka Univ. Osaka
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蒲生 健次
大阪大学基礎工学部
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蒲生 健次
大阪大学基礎工学部電気工学科
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Iwabuchi S
Department Of Physics Factually Of Science Nara Women's University
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IWABUCHI Shuichi
Institut fur Theoretische Physik, Freie Universitat Berlin
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蒲生 健次
阪大院基礎工
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蒲生 健二
阪大基礎工
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Nagaoka Yosuke
Faculty Of Engineering Kansai University
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HIGURASHI Hitoshi
ULSI Research Laboratories, Research and Development Center, Toshiba Corporation
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Yoshioka F
Sharp Corp. Nara Jpn
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Gamo K
Osaka Univ. Osaka
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Gamo Kenji
Graduate School Of Engineering Science Osaka University
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Gamo Kenji
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Gamo Kenji
Department Of Physical Science Graduate School Of Engineering Science Osaka University:research Cent
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Nagaoka Yosuke
Yukawa Institute For Theoretical Physics Kyoto University
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Wakaya Fujio
Department Of Electronics And Materials Physics School Of Engineering Science Osaka University
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Fukuda Reijiro
Department Of Physics Faculty Of Science And Technology Keio University
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Fukuda Reijiro
Research Institute For Fundamental Physics Kyoto University
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Higurashi Hitoshi
Department Of Physics Faculty Of Science And Technology Keio University
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IWABUCHI Shuichi
Department of Physics, Faculty of Science, Nara Women's University
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YOSHIOKA Fumiyoshi
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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IWABUCHI Shuichi
ULSI Research Center, TOSHIBS Corporation
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Iwabuchi Shuichi
Department Of Physics Faculty Of Science Nagoya University
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FUKUDA Reijiro
Department of Physics,Faculty of Science and Technology Keio University
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Wakaya Fujio
Department of Electrical Engineering, Osaka University, Toyonaka, Osaka 560
著作論文
- Control of Single-Electron Device Using Environmental Impedance Modulation
- Effect of Electronic States of Electrodes on Coulomb Blockade
- The Large Time Limit of the Evolution Kernel : Particles and Fields
- Possible Control Method for Single Electron Tunneling Based on Environmental Impedance Modulation
- Controllability of Single E1ectron Tunneling and Change in Coulomb Diamond Caused by Environmental Impedance Modulation
- Single E1ectron Tunneling Device Controlled by Environmental Impedance Modulation