Yoshizaki K | Materials & Electronic Devices Laboratory Mitsubishi Electric Corp.
スポンサーリンク
概要
関連著者
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MIYASHITA Satoru
Toyama Medical and Pharmaceutical University
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Matsuno Shigeru
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corp.
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Uchikawa Fusaoki
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corp.
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Yoshizaki Kiyoshi
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corp.
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Matsuno Shigeru
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Yoshizaki K
Materials & Electronic Devices Laboratory Mitsubishi Electric Corp.
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Uchikawa F
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Uchikawa Fusaoki
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Kobayashi Norio
Institute For Materials Research Tohoku University
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WATANABE Kazuo
Institute for Materials Research, Tohoku University
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Muto Yoshio
Institute For Materials Research Tohoku University
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佐藤 知矢
Department Of Physics Faculty Of Science Shinshu University
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WATAZAWA Keiichi
Sumitomo Heavy Industries Ltd.
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Noto K
Institute For Materials Research Tohoku University
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NAKABAYASHI Yukio
Department of Electronics and Electrical Engineering, Keio University
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Muto Y
Institute For Materials Research Tohoku University
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Nakabayashi Yukio
Super-GM
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Watanabe K
National Institute For Fusion Science
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Watanabe Kazuo
Institute For Materials Research Tohoku University
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Watanabe Kazuto
Safety Assessment Department Chugai Pharmaceutical Co. Ltd.
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Muto Y
The Institute For Materials Research Tohoku University
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Kuroda N
Nec Corp. Ibaraki Jpn
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Muto Yoshio
Institute For Materials Research (imr) Tohoku University
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Nakabayashi Y
Department Of Electronics And Electrical Engineering Keio University
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Kobayashi Norio
Institute For Materials Recearch Tohoku University
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Kobayashi Norio
Faculty Of Engineering Iwate University
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WATANABE Kazuo
Institute for Matererials Research, Tohoku University
著作論文
- Superconducting Properties of Y_1Ba_2Cu_3O_ MOCVD Films under High Magnetic Fields(High-T_c Superconducting Materials Research)
- Y-Ba-Cu-O Superconducting Films with High J_c Values by MOCVD using Ba-Addition Products