HAN X. | Faculty of Engineering, Yokohama National University

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概要

• 同名の論文著者
• Faculty of Engineering, Yokohama National Universityの論文著者

関連著者

• HAN X.

  Faculty of Engineering, Yokohama National University

• ITO A.

  Faculty of Education, Utsunomiya University

• Yu Andrew

  Department Of Applied Physics Graduate School Of Engineering Tohoku University

• Konno T.

  Institute For Materials Research Tohoku University

• Haneji N.

  Faculty Of Engineering Yokohama National University

• SUGAHARA M.

  Faculty of Engineering, Yokohama National University

• LU H.

  Faculty of Engineering, Yokohama National University

• YOSHIKAWA N.

  Faculty of Engineering, Yokohama National University

• MAEJIMA S.

  Faculty of Engineering, Yokohama National University

• WU S.

  Faculty of Engineering, Yokohama National University

• GAO H.

  Faculty of Engineering, Yokohama National University

• UNO K.

  Faculty of Engineering, Yokohama National University

• YU Andrew

  Faculty of Engineering, Tohoku University

• ANDO Y.

  Faculty of Engineering, Tohoku University

• YAOITA K.

  Faculty of Engineering, Tohoku University

• MIYAZAKI T.

  Faculty of Engineering, Tohoku University

• HIRAGA K.

  Institute for Materials Research, Tohoku University

• Yaoita K.

  Department of Applied Physics, Graduate School of Engineering, Tohoku University

• Han X.f.

  Department Of Applied Physics Graduate School Of Engineering Tohoku University

• Ando Y

  Tohoku University Dept. Of Applied Physics

• ANDO Y.

  Graduate School of Engineering, Tohoku University

• Ando Y

  Department Of Crystalline Materials Science Nagoya University

• Sugahara M.

  Faculty Of Engineering Yokohama National University

• Miyazaki T

  Tohoku University Dept. Of Applied Physics

• Maejima S.

  Faculty Of Engineering Yokohama National University

• Lu H.

  Faculty Of Engineering Yokohama National University

• Hiraga K.

  Institute For Materials Research Tohoku University

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著作論文

• Anomalous Effect in La_Sr_xCuO_4 on Doping Level x=1/4^n
• Structure and magnetoresistance of IrMn exchange-biased junctions

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