SUGIURA Masanori | Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

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概要

• SUGIURA Masanoriの詳細を見る
• 同名の論文著者
• Department of Electrical Engineering, Faculty of Engineering Science, Osaka Universityの論文著者

関連著者

• Noda Makoto

  Department Of Cardiology Social Insurance Central General Hospital

• KOBAYASHI Takeshi

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

• 野田 三喜男

  愛知教大

• Noda M

  Department Of Electronics Fukuoka Institute Of Technology

• Kobayashi Takeshi

  Department Of Biological Chemistry College Of Bioscience And Biotechnology Chubu University

• Tachiki Minoru

  School Of Science And Engineering:crest Jst (japan Science And Technology Corporation)

• Tachiki Minoru

  Department Of Electrical Engineering Faculty Of Engineering Science Osaka University

• Takeuchi Daisuke

  Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog

• SUGIURA Masanori

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

• Uragou Kazuyuki

  Faculty Of Engineering Science Osaka University

• Noda Makoto

  Department Of Biomaterials Science Graduate School Of Medical And Dental Sciences Kagoshima Universi

• Tachiki M

  Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog

• Kobayashi T

  Faculty Of Engineering Science Osaka University

• Taniuchi Hirotada

  School Of Science And Engineering Waseda University

• Sugiura Masanori

  Faculty of Engineering Science, Osaka University

• Narita Masanao

  Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency

• URAGOU Kazuyuki

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

• URAGO Kazuyuki

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

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著作論文

• First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting Oxides
• First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting Oxides

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