Fukuda Y | Shizuoka Univ. Hamamatsu Jpn
スポンサーリンク
概要
関連著者
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Fukuda Y
Shizuoka Univ. Hamamatsu Jpn
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Sanada N.
Research Institute of Electronics, Shizuoka University
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Fukuda Y.
Research Institute of Electronics, Shizuoka University
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Syono Y
Tohoku Univ. Sendai Jpn
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Moller P
Department Of Chemistry H.c. Orsted Institute University Of Copenhagen
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Moller P.j.
Department Of Chemistry University Of Copenhagen
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Suzuki Y.
Research Institute of Electronics, Shizuoka University
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Shimomura M.
Research Institute of Electronics, Shizuoka University
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Tachiki M.
Institute For Materials Research Tohoku University
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Syono Y.
Institute for Material Research, Tohoku University
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Nameki H.
Institute for Materials Research, Tohoku University
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Syono Y.
Institute for Materials Research, Tohoku University
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Tachiki M.
Institute for Materials Research, Tohoku University
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Shimomura S.
Research Institute of Electronics, Shizuoka University
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Nameki H.
Institute For Materials Research Tohoku University
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Syono Y.
Institute For Materials Research Tohoku University
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Syono Y.
Institute For Material Research Tohoku University
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Simomura M.
Research Institute of Electronics, Shizuoka University
著作論文
- Angle-resolved photoelectron spectroscopy study of the InP(100)-(2×4) surface electronic structure
- Structure of an InAs(111)A-(2×2)S surface studied by scanning tunneling microscopy, photoelectron spectroscopy, and x-ray photoelectron diffraction
- (NH₄)₂Sx-treated InAs(001) surface studied by x-ray photoelectron spectroscopy and low-energy electron diffraction
- Metal -Insulator Transition of Bi_2(Sr_2-xM_x)CuO_y Studied by Photoemission and Inverse Photoemission
- Surface Structures and Electronic States of H_2S-treated InP(001) Studied by LEED, AES, XPS, and IPES
- Bi₂+xSr₂-xCuOy (0.10≤x≤0.40) studied by photoemission and inverse-photoemission spectroscopy
- Electronic Structure of H_2S-treated InP(001) Surface