O Byungsung | Department Of Physics Chungnam National University
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概要
関連著者
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O Byungsung
Department Of Physics Chungnam National University
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KIM Yongmin
Department of Semiconductor Science, Dongguk University
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KIM Dae-Jin
Research & Development Center, Hantech Co., Ltd.
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KIM Hyun-Jung
Research & Development Center, Hantech Co., Ltd.
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RYU Je-Kil
Research & Development Center, Hantech Co., Ltd.
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O Byungsung
Department of Physics, Chungnam National University
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PAK Sung-Sik
Research & Development Center, Hantech Co., Ltd.
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Kim Yongmin
Department Of Physics Chungnam National University
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Song Yoonho
Semiconductor Division Electronics And Telecommunications Research Institute
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Lee JinHo
Semiconductor Division, Electronics and Telecommunications Research Institute
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Cho KyoungIk
Semiconductor Division, Electronics and Telecommunications Research Institute
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Yoo HyungJoun
Semiconductor Division, Electronics and Telecommunications Research Institute
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Lee Jinho
Semiconductor Division Electronics And Telecommunications Research Institute
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Cho Kyoungik
Semiconductor Division Electronics And Telecommunications Research Institute
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Yoo Hyungjoun
Semiconductor Division Electronics And Telecommunications Research Institute
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Pak Sung-Sik
Research & Development Center, Hantech Co., Ltd. 372 Jung-Ri, Dongtan-Myeon, Hwaseong-Si, Gyeonggi-Do 445-813, Korea
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Kim Hyun-Jung
Research & Development Center, Hantech Co., Ltd. 372 Jung-Ri, Dongtan-Myeon, Hwaseong-Si, Gyeonggi-Do 445-813, Korea
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Park Seong-Eun
Department of Physics, Chungnam National University, Taejon 305-764, Korea
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Ryu Je-Kil
Research & Development Center, Hantech Co., Ltd. 372 Jung-Ri, Dongtan-Myeon, Hwaseong-Si, Gyeonggi-Do 445-813, Korea
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Kim Dae-Jin
Research & Development Center, Hantech Co., Ltd. 372 Jung-Ri, Dongtan-Myeon, Hwaseong-Si, Gyeonggi-Do 445-813, Korea
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Park Seon-Eun
Department of Physics, Chungnam National University, Taejon 305-764, Korea
著作論文
- DEGRADATION MECHANISM OF ELECTRON EMISSION CHARACTERISTICS IN SILICON FIELD EMITTERS
- Excimer Laser Annealing with a Line Beam for Improvement of Structural and Optical Properties of Polycrystalline GaN