Guo Y | Shanghai Inst. Ceramics Chinese Acad. Sci. Chn
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概要
関連著者
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Guo Y
Shanghai Inst. Ceramics Chinese Acad. Sci. Chn
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山口 剛士
鳥取大学農学部附属鳥由来人獣共通感染症疫学研究センター
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山口 剛士
岐阜大学 連合大学院連合獣医学研究科
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KAN Hirofumi
Central Research Laboratory, Hamamatsu Photonics K.K.
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Gao Y
Institute Of Semiconductor And Information Technology College Of Electronics And Information Enginee
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Yamaguchi Taichi
Superconductivity Research Dept. Material Research Lab. Fujikura Ltd. :(present Address)quality Assu
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Yamaguchi Tsuyoshi
Department Of Applied Veterinary Sciences United Graduate School Of Veterinary Sciences Gifu Univers
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Kan Hirofumi
Central Research Institute Hamamatsu Photonics K. K.
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Aoyama Mitsuru
Research Institute Of Electronics Shizuoka University
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Kan H
Hamamatsu Photonics K.k. Hamakita Jpn
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Yamaguchi T
Toshiba Corp. Yokohama Jpn
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Aoyama Makoto
Advanced Photon Research Center Kansai Research Establishment Japan Atomic Energy Research Institute
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YAMAGUCHI Tomuo
Research Institute of Electronics, Shizuoka University
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AOYAMA Mitsuru
Research Institute of Electronics, Shizuoka University
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Yamaguchi Tomuo
Research Institute Of Electronics Shizuoka University
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Gong X
Institute Of Semiconductor And Information Technology College Of Electronics And Information Enginee
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GONG Xiu
Central Research Laboratory, Hamamatsu Photonics K.K.
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GAO Yu
Research Institute of Electronics, Shizuoka University
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Gao Yu
Research Institute Of Electronics Shizuoka University
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MAKINO Takamitsu
Central Research Laboratory, Hamamatsu Photonics K.K.
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IIDA Takefumi
Central Research Laboratory, Hamamatsu, Photonics K.K.
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Iida Takefumi
Central Research Laboratory
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Iida T
Central Research Laboratory
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Makino Takamitsu
Central Research Laboratory
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Makino T
Central Research Laboratory
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Xu Haiqing
The State Key Laboratory Of High Performance Ceramics And Superfine Microstructure Shanghai Institut
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Rowell Nelson
National Research Council
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Luo H
The State Key Laboratory Of High Performance Ceramics And Superfine Microstructure Shanghai Institut
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Luo Haosu
Laboratory Of Functional Inorganic Materials Shanghai Institute Of Ceramics Chinese Acedemy Of Scien
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KUMAGAWA Masashi
Research Institute of Electronics, Shizuoka University
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GAO Yuqi
Laboratory of Functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sci
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XU Haiqing
Laboratory of Functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sci
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WU Yongjun
Laboratory of Functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sci
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HE Tianhou
Laboratory of Functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sci
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XU Guisheng
Laboratory of Functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sci
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WATANABE Kenzo
Research Institute of Electronics, Shizuoka University
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GAO YuZhu
Research Institute of Electronics, Shizuoka University
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Kumagawa Masashi
Research Institute Of Electrical Communication Tohoku University:(present Address) Research Institut
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Watanabe Kenzo
Research Institute Of Electronics Shizuoka University
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Murata Junichi
Central Research Laboratory Hamamatsu Photonics
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GAO Yu
Graduate School of Electronic Science and Technology, Shizuoka University
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AOYAMA Mitsuru
Graduate School of Electronic Science and Technology, Shizuoka University
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YAMAGUCHI Tomuo
Graduate School of Electronic Science and Technology, Shizuoka University
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Wu Yongjun
Laboratory Of Functional Inorganic Materials Shanghai Institute Of Ceramics Chinese Academy Of Scien
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He Tianhou
The State Key Laboratory Of High Performance Ceramics And Superfine Microstructure Shanghai Institut
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Xu Guisheng
Laboratory Of Functional Inorganic Materials Shanghai Institute Of Ceramics Chinese Academy Of Scien
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Watanabe Kenzo
Research Institute Of Electronics
著作論文
- Growth and Dielectric Properties of 0.48 Pb(Fe_Nb_)O_3-0.52 PbTiO_3 Single Crystal : Electrical Properties of Condensed Matter
- Light-Emitting Diodes with a Peak Wavelength of 5.38 μm from Liquid-Phase Epitaxial Ga_ In_ Sb/InSb Heterostructures(Semiconductors)
- Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs_Sb_/InAs_P_Sb_ Heterostructures
- InAs_Sb_y Single Crystals with Cutoff Wavelength of 8-12 μm Grown by a New Method
- Room-Temperature Operation of InAsSb/InAsPSb Photodetectors with a Cut-off Wavelength of 4.3 μm
- Melt Epitaxial Growth of High Quality InAs_Sb_y and In_xGa_Sb single crystals with cutoff wavelength of 7-12 μm
- Germanium- and Zinc-Doped P-type InAsSb Single Crystals with a Cutoff Wavelength of 12.5 μm