Nonoue Shin-ya | Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

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• NUNOUE Shin-yaの詳細を見る
• 同名の論文著者
• Toshiba Corporation Advanced Semiconductor Devices Research Laboratoriesの論文著者

Toshiba Corporation Advanced Semiconductor Devices Research Laboratories | 論文

• Thermal Analysis for GaN Laser Diodes
• Analysis of Device Characteristics for InGaN Semiconductor Lasers
• Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes
• Reactive Ion Beam Etching and Overgrowth Process for Fabrication of InGaN Inner Stripe Laser Diodes
• Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates

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