ROVEDO N. | IBM System and Technology Group
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概要
関連著者
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ROVEDO N.
IBM System and Technology Group
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Luo Z.
Chartered Semiconductor Manufacturing Limited
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Ng H.
Ibm Semiconductor Research And Technology Group
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Kim J.
Samsung Elec. Co. Alliances At Ibm Semiconductor Research And Development Center (srdc)
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TEO L.
Chartered Semiconductor Manufacturing Ltd
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UTOMO H.
IBM System and Technology Group
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TAN S.
Chartered Semiconductor Manufacturing Ltd
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ONG S.
Chartered Semiconductor Manufacturing Ltd
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LAI C.
Chartered Semiconductor Manufacturing Ltd
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LUO Z.
IBM System and Technology Group
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KIM S.
IBM System and Technology Group
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STIERSTORFER R.
Infineon Technologies
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MISHRA S.
Chartered Semiconductor Manufacturing Ltd
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ZHUANG H.
Infineon Technologies
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YAP C.
Chartered Semiconductor Manufacturing Ltd
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ZHANG Y.
IBM System and Technology Group
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HAN J.-P.
Infineon Technologies
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LIPTON R.
IBM System and Technology Group
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LI J.
IBM System and Technology Group
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CHIULLI G.
IBM System and Technology Group
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PHOONG B.
Chartered Semiconductor Manufacturing Ltd
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ELLER M.
Infineon Technologies
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WU X.
Chartered Semiconductor Manufacturing Ltd
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LEE Y.
Chartered Semiconductor Manufacturing Ltd
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WISE R.
IBM System and Technology Group
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SHANG H.
IBM System and Technology Group
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NG H.
IBM System and Technology Group
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SUDIJONO J.
Chartered Semiconductor Manufacturing Ltd
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LINDSAY R.
Infineon Technologies AG
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CHAN V.
IBM Semiconductor Research and Technology Group
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Kim J.
Samsung Advanced Institute Of Technology (sait)
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Utomo H.
Ibm Semiconductor Research And Technology Group
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Eller M.
Infineon Technologies Ag
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Sudijono J.
Chartered Semiconductor Manufacturing Limited
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SUNG C.
Research Division, T.J. Watson Research Center
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YIN Haizhou
Semiconductor Research & Development Center Microelectronic Division
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NG H.
Semiconductor Research & Development Center Microelectronic Division
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SAENGER K.
Research Division, T.J. Watson Research Center
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PFEIFFER G.
Semiconductor Research & Development Center Microelectronic Division
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CHAN V.
Semiconductor Research & Development Center Microelectronic Division
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ZHANG R.
Semiconductor Research & Development Center Microelectronic Division
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LI J.
Semiconductor Research & Development Center Microelectronic Division
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OTT J.
Research Division, T.J. Watson Research Center
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BENDERNAGEL R.
Semiconductor Research & Development Center Microelectronic Division
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KO S.
Semiconductor Research & Development Center Microelectronic Division
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REN Z.
Semiconductor Research & Development Center Microelectronic Division
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CHEN X.
Semiconductor Research & Development Center Microelectronic Division
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KU V.
Semiconductor Research & Development Center Microelectronic Division
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LUO Z.
Semiconductor Research & Development Center Microelectronic Division
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ROVEDO N.
Semiconductor Research & Development Center Microelectronic Division
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FOGEL K.
Research Division, T.J. Watson Research Center
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KHARE M.
Research Division, T.J. Watson Research Center
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SHAHIDI G.
Research Division, T.J. Watson Research Center
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CROWDER S.
Semiconductor Research & Development Center Microelectronic Division
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Crowder S.
Semiconductor Research & Development Center Microelectronic Division
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Saenger K.
Research Division T.j. Watson Research Center
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Shahidi G.
Research Division T.j. Watson Research Center
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Yin Haizhou
Semiconductor Research & Development Center Microelectronic Division
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Fogel K.
Research Division T.j. Watson Research Center
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Bendernagel R.
Semiconductor Research & Development Center Microelectronic Division
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Khare M.
Research Division T.j. Watson Research Center
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Zhuang H.
Infineon Technologies Ag
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Ott J.
Research Division T.j. Watson Research Center
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Tan S.
Chartered Semiconductor Manufacturing Limited
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Lai C.
Chartered Semiconductor Manufacturing Limited
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Pfeiffer G.
Semiconductor Research & Development Center Microelectronic Division
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Shang H.
Ibm Semiconductor Research And Technology Group
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Ku V.
Semiconductor Research & Development Center Microelectronic Division
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Sung C.
Research Division T.j. Watson Research Center
著作論文
- A Novel Embedded Extension SiGe (e^2SiGe) Process for PFET Performance Enhancement for 45nm Technology and beyond
- Direct Silicon Bonded (DSB) Mixed Orientation Substrate for High Performance Bulk CMOS Technology