Nouchi Ryo | Wpi Advanced Institute For Materials Research And Department Of Physics Tohoku University
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概要
- Nouchi Ryoの詳細を見る
- 同名の論文著者
- Wpi Advanced Institute For Materials Research And Department Of Physics Tohoku Universityの論文著者
関連著者
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Nouchi Ryo
Wpi Advanced Institute For Materials Research And Department Of Physics Tohoku University
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Tanigaki Katsumi
Wpi Advanced Institute For Materials Research And Department Of Physics Tohoku University
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Fan Xiaoyan
WPI Advanced Institute for Materials Research, Tohoku University
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Nouchi Ryo
WPI Advanced Institute for Materials Research, Tohoku University
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Tanigaki Katsumi
WPI Advanced Institute for Materials Research, Tohoku University
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Fan Xiaoyan
Wpi Advanced Institute For Materials Research And Department Of Physics Tohoku University
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WATANABE Hiroki
Department of Applied Chemistry, Faculty of Engineering, Oita University
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Saito Tatsuya
WPI Advanced Institute for Materials Research and Department of Physics, Tohoku University
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Tanigaki Katsumi
Department Of Physics Graduate School Of Science Tohoku Univ.:wpi Tohoku Univ.
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Saito Tatsuya
Wpi Advanced Institute For Materials Research And Department Of Physics Tohoku University
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Saito Tatsuya
Department Of Endocrinology And Metabolism Yokohama City University Graduate School Of Medicine
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Tanigaki Katsumi
Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
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Tanigaki Katsumi
WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8578, Japan
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Nouchi Ryo
WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8578, Japan
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Saito Tatsuya
Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
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Tanigaki Katsumi
Department of Chemistry, Faculty of Engineering, Yokohama National University
著作論文
- 23pRA-9 Experimental conditions to achieve efficient chemical modification of graphene
- 23aGS-10 Electrical characteristics of chemically-doped graphene
- Determination of Carrier Type Doped from Metal Contacts to Graphene by Channel-Length-Dependent Shift of Charge Neutrality Points
- Empirical Modeling of Metal-Contact Effects on Graphene Field-Effect Transistors
- Effect of Flexibility on the Formation of Conducting Layers at Organic Single Crystal Heterointerfaces