Ohno Y | Department Of Electrical And Electronic Engineering The University Of Tokushima
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- Department Of Electrical And Electronic Engineering The University Of Tokushimaの論文著者
Department Of Electrical And Electronic Engineering The University Of Tokushima | 論文
- Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
- Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes
- Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
- Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
- Ohmic Contact to P-Type GaN