井上 貴司 | 山陽女子中学校・高等学校
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概要
論文 | ランダム
- Initial Growth of Polycrystalline Silicon Films on Substrates Subjected to Different Plasma Treatments
- Effects of the Addition of SiF_4 to the SiH_4 Feed Gas for Depositing Polycrystalline Silicon Films at Low Temperature
- Stress in Amorphous SiO_x:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
- Properties of "Stoichiometric" Silicon Oxynitride Films
- Effects of Deposition Temperature on Strain in Polycrystalline SiC Films Deposited by Radio-Frequency Glow Discharge