SAITO Hiroyuki | Corporate Research and Development Center, Oki Electric Industry Co., Ltd.
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- 同名の論文著者
- Corporate Research and Development Center, Oki Electric Industry Co., Ltd.の論文著者
Corporate Research and Development Center, Oki Electric Industry Co., Ltd. | 論文
- 12.88W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation
- Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs
- Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate
- AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD(Session9B: GaN and SiC Device Process Technology)
- AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD(Session9B: GaN and SiC Device Process Technology)