SUGIYAMA H. | Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University

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Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University | 論文

• A Fatigue-Tolerant Metal-Ferroelectric-Oxide-Semiconductor Structure with Large Memory Window Using Sr-deficient and Bi-excess Sr_Bi_Ta_2O_9 Ferroelectric Films Prepared on SiO_2/Si at Low Temperature by Pulsed Laser Deposition

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