LI Zhengyi | Fujitsu Laboratories Ltd.
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概要
Fujitsu Laboratories Ltd. | 論文
- Efficient Method to Measure IMD of Power Amplifier with Simplified Phase Determination Procedure to Clarify Memory Effect Origins
- Influence of Frequency Characteristics of RF Circuits in Digital Predistortion Type Linearizer System on Adjacent Channel Leakage Ratio for W-CDMA Power Amplifier(Analog Circuit Techniques and Related Topics)
- Non-linear Distortion Caused by the Electrical Memory Effect and its Dependence on the Circuit Parameters of a GaAs MESFET Amplifier
- Non-linear Distortion Caused by the Electrical Memory Effect and its Dependence on the Circuit Parameters of a GaAs MESFET Amplifier
- Non-linear Distortion Caused by the Electrical Memory Effect and its Dependence on the Circuit Parameters of a GaAs MESFET Amplifier