Nishimura Yoshitaka | Electronic Device Laboratory, Fuji Electric Co., Ltd.
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概要
Electronic Device Laboratory, Fuji Electric Co., Ltd. | 論文
- Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
- Reverse-Blocking IGBTs with V-Groove Isolation Layer for Three-Level Power Converters