He Guangyuan | The Genetic Engineering International Cooperation Base of Chinese Ministry of Science and Technology, Key Laboratory of Molecular Biophysics of Chinese Ministry of Education, College of Life Science and Technology, Huazhong University of Science & Tec
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概要
- He Guangyuanの詳細を見る
- 同名の論文著者
- The Genetic Engineering International Cooperation Base of Chinese Ministry of Science and Technology, Key Laboratory of Molecular Biophysics of Chinese Ministry of Education, College of Life Science and Technology, Huazhong University of Science & Tecの論文著者
論文 | ランダム
- 28p-D-8 半導体中の不純物散乱におけるBorn近似の妥当性
- 27a-M-11 金属-絶縁体相転移付近の半導体の電気伝導度
- 30p-TD-7 強磁場下の不純物ドープ半導体の理論
- 3p-ZE-15 半導体の金属-非金属転移の理論
- 5a-S4-1 高濃度不純物ドープ半導体の低温電気伝導度の理論III