HASHIZUME T. | Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University
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- Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido Universityの論文著者
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University | 論文
- Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates
- Control of Dot Size and Tunneling Barrier Profile in In_Ga_As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates
- Structural and Optical Properties of InGaAs Ridge Quantum Wire Arrays with Sub-micron Pitches Grown by Selective MBE on InP Substrates
- Structural and Optical Properties of 10nm-Class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate
- Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective Molecular Beam Epitaxial Growth of InGaAs Quantum Structure Arrays