Tai Toshiaki | Department of Electronics, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-0013, Japan
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- Department of Electronics, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-0013, Japanの論文著者
Department of Electronics, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-0013, Japan | 論文
- A Study of Surface Resistance of Si(100)
- Effects of Ag Thickness and Deposition Temperature on Prevention of Cu Diffusion in Cu/Ag/Si System