Mitsuya Masatoshi | Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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- Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japanの論文著者
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan | 論文
- Preparation of (111)-Oriented SrRuO3/Pt Electrodes for Pb(Zr,Ti)O3-Based Ferroelectric Capacitors: Grain Size and Roughness Impact
- Crystal Orientation Dependence on Electrical Properties of Pb(Zr,Ti)O3 Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition
- MOCVD Growth of Bi1.5Zn1.0Nb1.5O7 (BZN) Epitaxial Thin Films and Their Electrical Properties
- Large Lattice Misfit on Epitaxial Thin Film: Coincidence Site Lattice Expanded on Polar Coordinate System