Yanagihara Sachiko | Research Center of Ion Beam Technology and College of Engineering, Hosei University, Koganei, Tokyo 184-8584, Japan

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• Yanagihara Sachikoの詳細を見る
• 同名の論文著者
• Research Center of Ion Beam Technology and College of Engineering, Hosei University, Koganei, Tokyo 184-8584, Japanの論文著者

Research Center of Ion Beam Technology and College of Engineering, Hosei University, Koganei, Tokyo 184-8584, Japan | 論文

• Electrical Properties of N Ion Implanted Layer in $(1\bar{1}00)$-Oriented 6H-SiC

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