塩崎 亮佑 | パナソニック株式会社オートモーティブ&インダストリアルシステムズ社技術本部
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概要
論文 | ランダム
- Room Temperature 339 nm Emission from Al_Ga_N/Al_Ga_N Double Heterostructure Light-Emitting Diode on Sapphire Substrate
- Suppression of Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates
- First Fabrication of a Reliable AlGaAs/GaAs LED on Si with Self-Assembled GaAs Islands Active Region
- Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
- First Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Wells Laser Grown on Si Substrate