Sakai Masahiro | Research Center for Nano-Device and System, Nagoya Institute of Technology

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Research Center for Nano-Device and System, Nagoya Institute of Technology | 論文

• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric (Electron devices)
• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors
• First-Principles Calculation of Bandgap Bowing Parameter for Wurtzite InAlGaN Quaternary Alloy using Large Supercell

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