Ogawa Hiroki | Process Development Division C850, Fujitsu Limited, 1015 Kamikodanaka, Nakahara–ku, Kawasaki, Kanagawa 211, Japan
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概要
- Ogawa Hirokiの詳細を見る
- 同名の論文著者
- Process Development Division C850, Fujitsu Limited, 1015 Kamikodanaka, Nakahara–ku, Kawasaki, Kanagawa 211, Japanの論文著者
論文 | ランダム
- Cathode electron injection breakdown model and time dependent dielectric breakdown lifetime prediction in high-k/metal gate stack p-type metal-oxide-silicon field effect transistors
- Comprehensive analysis of positive and negative bias temperature instabilities in high-k/metal gate stack metal-oxide-silicon field effect transistors with equivalent oxide thickness scaling to sub-1nm (Special issue: Solid state devices and materials)
- Origin of the hole current in n-type high-k/metal gate stacks field effect transistor in an inversion state
- Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
- Spectral Effects of a Single-Junction Amorphous Silicon Solar Cell on Outdoor Performance