GAN L. | Institute of Materials Research and Engineering
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概要
Institute of Materials Research and Engineering | 論文
- Characteristics of Pt/Schottky Diode s fabricated on the Cracked GaN Epitaxial Layer on (111) Silicon
- Excimer-Laser-Induced Oxidation of GaN Epilayer
- Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In_Ga_N/In_Ga_N Quantum Wells : Electnical Properties of Condensed Malter
- Normal Incidence Intersubband Absorption in GaN/AlN Superlattices Grown on Facet-Controlled Epitaxial Lateral Overgrown GaN/Sapphire Templates
- Direct Electron Transfer of Glucose Oxidase Molecules Adsorbed onto Carbon Nanotube Powder Microelectrode