Kim Seong-Jin | Electrotechnical Laboratory and CREST, Japan Science and Technology Corporation(JST):New Energy and Industrial Technology Development Organization(NEDO):(Present address)Electronics and Telecommunications Research Institute

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• Electrotechnical Laboratory and CREST, Japan Science and Technology Corporation(JST):New Energy and Industrial Technology Development Organization(NEDO):(Present address)Electronics and Telecommunications Research Instituteの論文著者

Electrotechnical Laboratory and CREST, Japan Science and Technology Corporation(JST):New Energy and Industrial Technology Development Organization(NEDO):(Present address)Electronics and Telecommunications Research Institute | 論文

• Gate-Length Dependence of Negative Differential Resistance in InGaAs/InAlAs Quantum Well Field-Effect Transistor

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