Egawa Takashi | Research Center for Nano-Devices and System, Nagoya Institute of Technology

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Research Center for Nano-Devices and System, Nagoya Institute of Technology | 論文

• A comparison on the Electrical Characteristics of SiO_2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal-Oxide/Insulator-Semiconductor High-Electron Mobility-Transistors

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