Fujita J. | Materials and Electronic Devices Laboratory Mitsubishi Electric Corporation
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Materials and Electronic Devices Laboratory Mitsubishi Electric Corporation | 論文
- Hysteretic Josephson Junction Behavior of Ba_K_xBiO_3 Grain Boundary Junctions Using SrTiO_3 Bicrystal Substrates
- DC Superconducting Quantum Interference Devices with BiSrCaCuO Bicrystal Grain Boundary Junctions at 77 K
- Dielectric Properties of (Ba,Sr)TiO_3 Thin Films Deposited by RF Sputtering
- In-plane Orientation and Coincidence Site Lattice Relation of Bi_2Sr_2CaCu_2O_x Thin Films Formed on Highly Mismatched (001) YAG Substrates
- 45° Grain Boundary Junctions in (001)-Oriented BiSrCaCuO Films