Steenwinckel David | NXP Semiconductors
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概要
NXP Semiconductors | 論文
- A Breakthrough Electronic Lithography Process Through Si Layer for Self Aligning Gates in Planar Double-Gate Transistors for 32nm Node And Below
- Si_Ge_x/Si Selective Etch with HCl for Thin Si-Channel Transistors Integration
- A Novel Self Aligned Design Adapted Gate All Around (SADAGAA) MOSFET including two stacked Channels : A High Co-Integration Potential
- CMP-less Co-Integration of Tunable Ni-TOSI CMOS for Low Power Digital and Analog Applications
- Highly scalable and WF-tunable Ni(Pt)Si / SiON TOSI-gate CMOS devices obtained in a CMP-less integration scheme