Vigar David | Department of Technology Development, Chartered Semiconductor Manufacturing Ltd
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Department of Technology Development, Chartered Semiconductor Manufacturing Ltd | 論文
- Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11μm Dual Gate Oxide CMOS Technology
- Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11μm Dual Gate Oxide CMOS Technology
- Effective Channel Length Shortening and Mobility Increase of p-Channel Metal Oxide Semiconductor Transistors Resulting in Higher Drive Current Using Short Source-Drain Diffusion Length
- Improving the Accuracy of Modified Shift-and-Ratio Channel Length Extraction Method Using Scanning Capacitance Microscopy