茂木 睦 | 三井金属鉱業株式会社探査部
スポンサーリンク
概要
論文 | ランダム
- 4端子型FinFETを用いた簡素化論理ゲートの構成
- Investigation of body bias dependence of gate-induced drain leakage current for body-tied fin field effect transistor
- A novel body-tied fin field effect transistor flash memory structure with λ-shaped floating gate for sub 45nm NOR flash memory
- Comparative study of p[+]/n[+] gate modified saddle metal oxide semiconductor field effect transistors and P[+]/n[+] gate bulk fin field effect transistors for sub-40nm dynamic random access memory cell transistors
- Performance comparison between asymmetric polycrystalline silicon gate and TiN gate fin-shaped field effect transistors (Special issue: Microprocesses and nanotechnology)